Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2008-06-12
2011-11-15
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S004000, C438S689000, C438S780000, C438S781000, C257SE21043
Reexamination Certificate
active
08058153
ABSTRACT:
There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults.A damaged functional group generated in a surface of the low dielectric insulating film by a processing is substituted with a hydrophobic functional group (ST.2). A damaged component present under a dense layer generated in the surface of the low dielectric insulating film by the substitution process is recovered by using an ultraviolet heating process (ST.3).
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Japanese Office action for JP 2007-158510, dated May 19, 2009.
Asako Ryuichi
Ohsawa Yusuke
Nguyen Thanh
Pearne & Gordon LLP
Tokyo Electron Limited
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