Method for reclaiming and reusing wafers

Details Method for reclaiming and reusing wafers Method for reclaiming and reusing wafers

2004-09-15

2008-05-20

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S488000, C438S684000, C438S479000, C257S686000, C257S753000, C257SE21122, C257SE21567, C257SE21568

Reexamination Certificate

active

07375005

ABSTRACT:
Embodiments of the present invention provide a method for reclaiming and reusing a wafer. In one embodiment, a method for reclaiming a wafer comprises providing a used, nonproductive wafer having a semiconductor substrate and a polysilicon layer formed on the semiconductor substrate; oxidizing a first part of the polysilicon layer to form a first oxide layer; removing the first oxide layer; and oxidizing a second part of the polysilicon layer to form a second oxide layer on the used wafer which is to be used as a reclaimed wafer. The nonproductive wafer is used to improve the quality of a deposition process of the polysilicon layer on one or more productive wafers.

REFERENCES:
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6794227 (2004-09-01), Koveshnikov
patent: 2003/0087108 (2003-05-01), Herner et al.
patent: 2003/0159644 (2003-08-01), Yonehara et al.
patent: 2004/0185638 (2004-09-01), Kakizaki et al.
Handbook of semiconductor wafer cleaning technology-science, technology, and application edited by:Kern, W.

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