Method for recharging of silicon granules in a Czochralski singl

Details Method for recharging of silicon granules in a Czochralski singl Method for recharging of silicon granules in a Czochralski singl

1995-11-09

1997-11-25

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 33, 117 34, C30B 1504

Patent

active

056907338

ABSTRACT:
A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.

REFERENCES:
patent: 4468279 (1984-08-01), Itzkan
patent: 5037503 (1991-08-01), Kajimoto et al.
patent: 5080873 (1992-01-01), Ono et al.
patent: 5462010 (1995-10-01), Takano et al.
patent: 5492078 (1996-02-01), Alterkruger et al.
patent: 5492079 (1996-02-01), Geissler et al.

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