Method for realizing a multispacer structure, use of said...

Etching a substrate: processes – Forming or treating an article whose final configuration has...

Reexamination Certificate

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C216S013000, C216S015000, C216S039000, C216S041000, C216S046000, C216S052000, C216S079000, C216S083000, C216S088000, C438S696000, C438S700000, C438S703000, C438S946000, C438S947000, C264S293000, C977S887000, C977S888000

Reexamination Certificate

active

07867402

ABSTRACT:
A method realizes a multispacer structure including an array of spacers having same height. The method includes realizing, on a substrate, a sacrificial layer of a first material; b) realizing, on the sacrificial layer, a sequence of mask spacers obtained by SnPT, which are alternately obtained in at least two different materials; c) chemically etching one of the two different materials with selective removal of the mask spacers of this etched material and partial exposure of the sacrificial layer; d) chemically and/or anisotropically etching the first material with selective removal of the exposed portions of the sacrificial layer; e) chemically etching the other one of the two different materials with selective removal of the mask spacers of this etched material and obtainment of the multispacer structure.

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