Etching a substrate: processes – Forming or treating an article whose final configuration has...
Reexamination Certificate
2011-01-11
2011-01-11
Alanko, Anita K (Department: 1713)
Etching a substrate: processes
Forming or treating an article whose final configuration has...
C216S013000, C216S015000, C216S039000, C216S041000, C216S046000, C216S052000, C216S079000, C216S083000, C216S088000, C438S696000, C438S700000, C438S703000, C438S946000, C438S947000, C264S293000, C977S887000, C977S888000
Reexamination Certificate
active
07867402
ABSTRACT:
A method realizes a multispacer structure including an array of spacers having same height. The method includes realizing, on a substrate, a sacrificial layer of a first material; b) realizing, on the sacrificial layer, a sequence of mask spacers obtained by SnPT, which are alternately obtained in at least two different materials; c) chemically etching one of the two different materials with selective removal of the mask spacers of this etched material and partial exposure of the sacrificial layer; d) chemically and/or anisotropically etching the first material with selective removal of the exposed portions of the sacrificial layer; e) chemically etching the other one of the two different materials with selective removal of the mask spacers of this etched material and obtainment of the multispacer structure.
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Cerofolini Gianfranco
Mascolo Danilo
Alanko Anita K
Iannucci Robert
Jorgenson Lisa K.
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
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