Method for realizing a hosting structure of nanometric elements

Details Method for realizing a hosting structure of nanometric elements Method for realizing a hosting structure of nanometric elements

2005-08-30

2008-10-07

Pham, Thanh V (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C438S042000, C438S694000, C438S696000, C438S699000, C438S703000, C438S738000, C438S758000, C438S759000, C438S761000, C438S763000, C257SE21205, C257SE21223, C257SE21626, C257SE21640

Reexamination Certificate

active

07432120

ABSTRACT:
Method for manufacturing a hosting structure of nanometric elements comprising the steps of depositing on an upper surface of a substrate, of a first material, a block-seed having at least one side wall. Depositing on at least one portion of sad surface and on the block-seed a first layer, of predetermined thickness of a second material, and subsequently selectively and anisotropically etching it to form a spacer-seed adjacent to the side wall. The cycle of deposition and selective etching steps of a predetermined material are repeated n times (n≧2), with at least one spacer formed in each cycle. This predetermined material is different for each pair of consecutive depositions. The above n steps provides at least one multilayer body. Further selective etching removes every other spacers to provide a plurality of nanometric hosting seats, which forms contact terminals for a plurality of molecular transistors hosted in said hosting seats.

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