Method for reading nonvolatile memory at power-on stage

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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Details

C365S236000, C365S185200, C365S189090, C365S189040

Reexamination Certificate

active

07738296

ABSTRACT:
A method for reading data in a nonvolatile memory at a power-on stage is provided and includes the following steps. Firstly, the data are read through a reference voltage. Next, a failure number is counted when reading the data has a fail result. Next, the reference voltage is adjusted when the failure number reaches a predetermined number. The effect effectively and exactly reading configuration information at a power-on stage is accomplished through the method.

REFERENCES:
patent: 7064986 (2006-06-01), Lee et al.
patent: 2002/0051385 (2002-05-01), Hosono et al.
patent: 2007/0081377 (2007-04-01), Zheng et al.

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