Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-07-10
2007-07-10
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220
Reexamination Certificate
active
11205411
ABSTRACT:
A method includes changing a read reference level for reading a group of memory cells as a function of changes in a threshold voltage distribution of a different group of memory cells. The changing step includes determining a history read reference level of a group of history cells associated with a group of memory cells of a non-volatile memory cell array, allowing correct reading of the group of history cells, selecting a memory read reference level according to the first read reference level, and reading the non-volatile memory array cells.
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Cohen Guy
Lusky Eli
Shappir Assaf
Eitan Law Group
Ho Hoai V.
Saifun Semiconductors Ltd.
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