Method for reading non-volatile memory cells

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185220

Reexamination Certificate

active

11205411

ABSTRACT:
A method includes changing a read reference level for reading a group of memory cells as a function of changes in a threshold voltage distribution of a different group of memory cells. The changing step includes determining a history read reference level of a group of history cells associated with a group of memory cells of a non-volatile memory cell array, allowing correct reading of the group of history cells, selecting a memory read reference level according to the first read reference level, and reading the non-volatile memory array cells.

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