Method for reading multiple-value memory cells

Details Method for reading multiple-value memory cells Method for reading multiple-value memory cells

2007-03-28

2008-12-02

Lao, Lun-Yi (Department: 4134)

Static information storage and retrieval

Floating gate

Multiple values

C365S185180, C365S185190, C365S185220, C365S185230, C365S185240

Reexamination Certificate

active

07460397

ABSTRACT:
A read method for multiple-value information in a semiconductor memory such as a nonvolatile semiconductor memory is introduced. The method includes obtaining a first data from a selected multiple-value memory cell by applying a first voltage to a control gate of the selected multiple-value memory cell. A second data from the selected multiple-value memory cell is obtained by applying a second voltage to the control gate of the selected multiple-value memory cell. A first bit of the plurality of bits stored in the selected multiple-value memory cell is then obtained by performing a predetermined calculation on the first data and the second data. A second bit of the plurality of bits is obtained from the selected multiple-value memory cell by applying a third voltage to the control gate of the selected multiple-value memory cell.

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