Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-05-30
2006-05-30
Phan, Trong (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185190, C365S042000, C365S185200
Reexamination Certificate
active
07054197
ABSTRACT:
A reading method for a nonvolatile memory device, wherein the gate terminals of the array memory cell and of the reference memory cell are supplied with a same reading voltage having a ramp-like pattern, so as to modify their current-conduction states in successive times, and the contents of the array memory cell are determined on the basis of the modification order of the current-conduction states of the array memory cell and of the reference memory cell.
REFERENCES:
patent: 5508958 (1996-04-01), Fazio et al.
patent: 5596532 (1997-01-01), Cernea et al.
patent: 5936906 (1999-08-01), Tsen
patent: 5963462 (1999-10-01), Engh et al.
patent: 6009040 (1999-12-01), Choi et al.
patent: 6038166 (2000-03-01), Wong
patent: 6157572 (2000-12-01), Haddad et al.
patent: 6275417 (2001-08-01), Lee et al.
patent: 6339548 (2002-01-01), Hazama
patent: 6385110 (2002-05-01), Deguchi
patent: 6456527 (2002-09-01), Campardo et al.
patent: 2001/0006480 (2001-07-01), Sato
patent: 0 999 698 (2000-05-01), None
European Search Report from French Patent Application 03425224.7, filed Apr. 10, 2003.
Amin A A M: “Design And Analysis Of A High-Speed Sense Amplifier For Single-Transistor Nonvolatile Memory Cells” IEE Proceedings G. Electronic Circuits & Systems, Institution of Electrical Engineers. Stevenage, GB, vol. 140, No. 2 Part G, Apr. 1, 1993, pp. 117-122.
Jorgenson Lisa K.
Morris James H.
Phan Trong
STMicroelectronics S.r.l.
Wolf Greenfield & Sacks P.C.
LandOfFree
Method for reading a nonvolatile memory device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for reading a nonvolatile memory device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reading a nonvolatile memory device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3553452