Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-05-02
1996-12-03
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
3651853, 36518533, G11C 700
Patent
active
055815022
ABSTRACT:
A non-volatile memory device is provided having an array of single transistor memory cells read in accordance with an improved read cycle operation. That is, a selected cell mutually connected via a single bit line to other cells is assured activation necessary to discern a programmed or unprogrammed state of that cell. The non-selected cells connected to the selected cell are advantageously assured of non-activation by applying a negative voltage to the word lines associated with those cells. The negative voltage is less than the threshold voltage associated with the single transistor MOS device. The non-selected cells are thereby retained inactive to provide a singular active or inactive selected cell dependent solely upon the programmed state of the array. Negative voltage upon the non-selected cells provides minimal leakage of over-erased cells normally associated with depletion mode operation.
REFERENCES:
patent: 4486859 (1984-12-01), Hoffman
patent: 4958321 (1990-09-01), Chang
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5335198 (1994-08-01), Van Buskirk et al.
patent: 5371031 (1994-12-01), Gill et al.
patent: 5371706 (1994-12-01), Krentz et al.
patent: 5376573 (1994-12-01), Richart et al.
S. Lai et al., "Comparison and Trends in Today's Dominant E.sup.2 Technologies", Int'l Electron Devices Meeting Tech. Digest, (1986), pp. 580-583.
Garg Shyam G.
Patel Nipendra J.
Richart Robert B.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Nelms David C.
Phan Trong
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