Method for rapidly forming photoconductive layers for integrated

Details Method for rapidly forming photoconductive layers for integrated Method for rapidly forming photoconductive layers for integrated

1975-12-22

1978-01-17

Weiffenbach, Cameron K.

Coating processes

Electrical product produced

Photoelectric

96 15, 252501, 427 74, 427 82, 427 99, 427248R, 427377, 428209, 428457, 428914, B05D 512

Patent

active

040693562

ABSTRACT:
Photoconductive layers particularly useful with integrated circuits are directly made from compositions selected from the group consisting of zinc sulfide (ZnS), cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), zinc sulfide selenide (ZnS.sub.x Se.sub.1-x), and cadmium sulfide selenide (CdS.sub.x Se.sub.1-x), and cadmium sulfide telluride (CdS.sub.x Te.sub.1-x). Powders of component materials for the photoconductive layer are mixed with a copper halide powder such that the copper halide is between about 0.1 and 5.0% and preferably between about 0.1 and 2.0% by weight of the total mixture. The mixed powder then is formed into at least one pellet and the pellet used as an evaporant source for vacuum deposition of a photoconductive layer onto a prepared substrate at a rate greater than 10 nanometers/minute and preferably greater than 500 nanometers per minute. The photoconductive layer and substrate are then baked in an oxygen-rich atmosphere at a temperature between 300.degree. and 550.degree. C and preferably between 400.degree. and 550.degree. C for as short as about one minute.

REFERENCES:
patent: 2936252 (1960-05-01), Hanlet
patent: 3592643 (1971-07-01), Bartfai
patent: 3703594 (1972-11-01), Shigeaki et al.
patent: 3704265 (1972-11-01), Nakamura et al.
patent: 3743609 (1973-07-01), Hirata et al.
patent: 3754985 (1973-08-01), Marlor et al.

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