Method for Raman imaging of semiconductor materials

Optics: measuring and testing – By dispersed light spectroscopy – With raman type light scattering

Reexamination Certificate

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C356S302000, C356S237400, C356S237500

Reexamination Certificate

active

07123358

ABSTRACT:
An ion implanted semiconductor surface is illuminated with a flood illumination of monochromatic radiation, and an image of the surface is taken using light which has been Raman scattered. The illumination and imaging system are calibrated by flood illuminating a uniformly Raman scattering surface.

REFERENCES:
patent: 5048959 (1991-09-01), Morris et al.
patent: 6069690 (2000-05-01), Xu et al.
patent: 6151119 (2000-11-01), Campion et al.
patent: 6473174 (2002-10-01), Ballast et al.
patent: 6545755 (2003-04-01), Ishihama et al.
patent: 6870612 (2005-03-01), Jiang
K. Mizoguchi et al, Micro-Raman characterization of chrystallinity of laser-recrystallized silicon films on SiO2 insulators, Journal of Applied Physics, May 1999, vol. 85, No. 9, pp. 6758-6752.
Mizoguchi et al. “Raman image study of flash-lamp annealing of ion-implanted silicon”Journal of Applied Physics77 (7) Apr. 1, 1995, pp. 3388-3392.
Othonos et al., “Raman spectroscopy and spreading resistance analysis of phosphorous implanted and annealed silicon”,Journal of Applied Physics75 (12) Jun. 15, 1994, pp. 8032-8038.
Othonos et al., “Multi-wavelength Raman probing of phosphorus implanted silicon wafers”,Nucl. Instr. and Meth. in Phys. Rev. B.117 (1996) pp. 367-374.
Christofides et al., “Reconstruction mechanisms in ion implanted and annealed silicon wafers”,Defect and Diffusion Forumvols. 117-118 (1985), pp. 45-64.
Ishioka et al. “Reduction in Raman Intensity of Si (1 1 1) Due to Defect Formation During Ion Irradiation”,Solid State Communications, vol. 96, No. 6, pp. 387-390(1995).
Dey et al, “Raman scattering characterization of Si(100) implanted with mega-electron-volt Sb”,Journal of Applied Physics87 (3) Feb. 1, 2000, pp. 1110-1116.
Jain et al, “Raman scattering from ion-implanted silicon”Physical Review B.vol. 32, No. 10, Nov. 15, 1985, pp. 6688-6691.
Dewilton et al, “Raman Spectroscopy for Nondestructive Depth Profile Studies of Ion Implantation in Silicon”,J. Electrochem. Soc.: Solid State Science and Technology, ,May 1986, pp. 988-993.
Zhang et al “Details of the Damage Profile in Self-Ion-Implanted Silicon”, vol. 45Journal of Raman Spectrocsopy, pp. 515-520 (1994).
Gorelick, “Raman And Non-Linear Light Scattering From Undersurface Layers Of Ion Implanted Silicon Crystals”,materials Science Forum, vol. 173-174 (1995) pp. 237-242.
Nakashima et al. “Raman microprobe study of recrystallization in ion-implanted and laser-annealed polycrystalline silicon”Journal of Applied Physics54 (5) May. 1983, pp. 2611-2617.
Shukla et al, “Raman scattering from ultraheavily-ion-implanted and laser-annealed silicon”Physical Review B.vol. 34, No. 12, Dec. 15, 1986, pp. 8950-8953.
Dewilton et al, “A Raman study of the dopant distribution in submicron pn junctions in B+or BF2+ion implanted silicon”,SPIE vol. 623 Advanced Processing and Characterization of Semiconductors III1986, pp. 26-34.
Kirilov et al; “Amorphous phase transformation during rapid thermal annealing of ion-implanted Si”,Mat'l. Res. Soc. Symp. Proc., vol. 52 (1986), pp. 131-138.
M.D. Schaeberle and P.J. Treado, “LCTF Raman Chemical Imaging of Semiconductors,” Proc. Xvth ICORS, S.A. Asher, Ed (Wiley, Chichester, 1996) 1188-1189.
Patrick J. Treado, Joint Venture Advanced Technology Program (ATP) Proposal, Apr. 7, 1998.

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