Optics: measuring and testing – By dispersed light spectroscopy – With raman type light scattering
Reexamination Certificate
2006-10-17
2006-10-17
Lauchman, Layla G. (Department: 2877)
Optics: measuring and testing
By dispersed light spectroscopy
With raman type light scattering
C356S302000, C356S237400, C356S237500
Reexamination Certificate
active
07123358
ABSTRACT:
An ion implanted semiconductor surface is illuminated with a flood illumination of monochromatic radiation, and an image of the surface is taken using light which has been Raman scattered. The illumination and imaging system are calibrated by flood illuminating a uniformly Raman scattering surface.
REFERENCES:
patent: 5048959 (1991-09-01), Morris et al.
patent: 6069690 (2000-05-01), Xu et al.
patent: 6151119 (2000-11-01), Campion et al.
patent: 6473174 (2002-10-01), Ballast et al.
patent: 6545755 (2003-04-01), Ishihama et al.
patent: 6870612 (2005-03-01), Jiang
K. Mizoguchi et al, Micro-Raman characterization of chrystallinity of laser-recrystallized silicon films on SiO2 insulators, Journal of Applied Physics, May 1999, vol. 85, No. 9, pp. 6758-6752.
Mizoguchi et al. “Raman image study of flash-lamp annealing of ion-implanted silicon”Journal of Applied Physics77 (7) Apr. 1, 1995, pp. 3388-3392.
Othonos et al., “Raman spectroscopy and spreading resistance analysis of phosphorous implanted and annealed silicon”,Journal of Applied Physics75 (12) Jun. 15, 1994, pp. 8032-8038.
Othonos et al., “Multi-wavelength Raman probing of phosphorus implanted silicon wafers”,Nucl. Instr. and Meth. in Phys. Rev. B.117 (1996) pp. 367-374.
Christofides et al., “Reconstruction mechanisms in ion implanted and annealed silicon wafers”,Defect and Diffusion Forumvols. 117-118 (1985), pp. 45-64.
Ishioka et al. “Reduction in Raman Intensity of Si (1 1 1) Due to Defect Formation During Ion Irradiation”,Solid State Communications, vol. 96, No. 6, pp. 387-390(1995).
Dey et al, “Raman scattering characterization of Si(100) implanted with mega-electron-volt Sb”,Journal of Applied Physics87 (3) Feb. 1, 2000, pp. 1110-1116.
Jain et al, “Raman scattering from ion-implanted silicon”Physical Review B.vol. 32, No. 10, Nov. 15, 1985, pp. 6688-6691.
Dewilton et al, “Raman Spectroscopy for Nondestructive Depth Profile Studies of Ion Implantation in Silicon”,J. Electrochem. Soc.: Solid State Science and Technology, ,May 1986, pp. 988-993.
Zhang et al “Details of the Damage Profile in Self-Ion-Implanted Silicon”, vol. 45Journal of Raman Spectrocsopy, pp. 515-520 (1994).
Gorelick, “Raman And Non-Linear Light Scattering From Undersurface Layers Of Ion Implanted Silicon Crystals”,materials Science Forum, vol. 173-174 (1995) pp. 237-242.
Nakashima et al. “Raman microprobe study of recrystallization in ion-implanted and laser-annealed polycrystalline silicon”Journal of Applied Physics54 (5) May. 1983, pp. 2611-2617.
Shukla et al, “Raman scattering from ultraheavily-ion-implanted and laser-annealed silicon”Physical Review B.vol. 34, No. 12, Dec. 15, 1986, pp. 8950-8953.
Dewilton et al, “A Raman study of the dopant distribution in submicron pn junctions in B+or BF2+ion implanted silicon”,SPIE vol. 623 Advanced Processing and Characterization of Semiconductors III1986, pp. 26-34.
Kirilov et al; “Amorphous phase transformation during rapid thermal annealing of ion-implanted Si”,Mat'l. Res. Soc. Symp. Proc., vol. 52 (1986), pp. 131-138.
M.D. Schaeberle and P.J. Treado, “LCTF Raman Chemical Imaging of Semiconductors,” Proc. Xvth ICORS, S.A. Asher, Ed (Wiley, Chichester, 1996) 1188-1189.
Patrick J. Treado, Joint Venture Advanced Technology Program (ATP) Proposal, Apr. 7, 1998.
Demuth Joseph E.
Treado Patrick J.
Tuschel David
ChemImage Corporation
Lauchman Layla G.
Morgan & Lewis & Bockius, LLP
LandOfFree
Method for Raman imaging of semiconductor materials does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for Raman imaging of semiconductor materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for Raman imaging of semiconductor materials will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3616022