Method for radiation hardening semiconductor devices and integra

Details Method for radiation hardening semiconductor devices and integra Method for radiation hardening semiconductor devices and integra

1979-12-28

1982-03-09

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 42, 357 64, 357 91, H01L 21263, H01L 2122, H01L 754

Patent

active

043187501

ABSTRACT:
A method for eliminating the latch-up effect in integrated circuits having parasitic pnpn structures has been described comprising the step of irradiating the circuit with high energy particulate ions to provide low lifetime regions in the circuit to lower parasitic transistor gain.
The invention overcomes the problem of latch-up effect in integrated circuits where parasitic pnpn structures act as thyristors or silicon-controlled rectifiers which provide a low impedance path across the pnpn structure when the thyristor or silicon-controlled rectifier is turned on such as by transient ionizing radiation or by transient circuit voltages which forward bias the external junctions of the pnpn structure.

REFERENCES:
patent: 3691376 (1972-09-01), Bauerlein et al.
patent: 3862930 (1975-01-01), Hughes
patent: 4053925 (1977-10-01), Burr et al.
patent: 4056408 (1977-11-01), Bartko et al.
patent: 4134778 (1979-01-01), Sheng et al.
patent: 4158141 (1979-06-01), Seliger et al.
patent: 4161417 (1979-07-01), Yim et al.

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