Method for quantitating impurity concentration in a semiconducto

Details Method for quantitating impurity concentration in a semiconducto Method for quantitating impurity concentration in a semiconducto

1998-11-17

2000-10-10

Metjahic, Safet

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

324766, 438 17, G01R 3126

Patent

active

061305421

ABSTRACT:
Measurement of pulse CV characteristics and an SIMS measurement of a semiconductor substrate are made at the same position. An SIMS profile is calibrated by a method of least squares so that a dose amount determined from the SIMS profile coincide with a dose amount determined from the concentration profile of a carrier which is calculated from the pulse CV characteristics in a range where accuracy of the carrier concentration is secured. In the case where plural impurities are introduced, a measurement of pulse CV and SIMS measurement are made and the distribution of impurity concentration and the distribution of carrier concentration are estimated by simulation every time when an impurity is introduced. When an impurity is introduced in a high concentration, an impurity of the inverse conductive-type to that of the former impurity is introduced.

REFERENCES:
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patent: 5943552 (1999-08-01), Koveshnikov et al.
Nicollian, et al., "MOS (Metal Oxide Semiconductor) Physics and Technology", pp. 371-422, John Wiley & Sons, Inc., 1982, (Month unavailable).
"Solid Surface Analysis I", pp. 196-257, published by Kodansha Ltd., Apr. 20, 1995.

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