Method for purifying raw material gas for use in semiconductor m

Details Method for purifying raw material gas for use in semiconductor m Method for purifying raw material gas for use in semiconductor m

1984-06-20

1986-01-21

Doll, John

Chemistry of inorganic compounds

Modifying or removing component of normally gaseous mixture

Molecular oxygen or ozone component

423299, 423325, 423347, C01B 1300

Patent

active

045656770

ABSTRACT:
A purifier for purifying a raw material gas for use in manufacturing semiconductor devices is formed by a hydrogenated amorphous substance of an element selected from a group consisting of Si, Ge, P and As whose hydride gas is used as the raw material gas. This purifier is used for purifying the raw material gas to be purified in such a manner that the raw material gas is brought into contact with the purifier comprising the hydrogenated amorphous substance which is maintained at a temperature a little lower than the decomposition temperature of the raw material gas to efficiently remove the small amount of oxygen from the raw material gas.

REFERENCES:
patent: 1681702 (1928-08-01), Yost
patent: 2547874 (1951-04-01), Klema
patent: 2826480 (1958-03-01), Webster
patent: 4353788 (1982-10-01), Jeffrey et al.
Nebergall et al., "College Chemistry", Raytheon Education Company, Boston, 1968, p. 451.

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