Method for pulling up single crystal

Details Method for pulling up single crystal Method for pulling up single crystal

2006-02-17

2008-10-07

Kunemund, Robert M. (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C117S002000, C117S013000, C117S014000, C117S015000, C117S020000, C117S029000, C117S202000, C117S932000

Reexamination Certificate

active

07431764

ABSTRACT:
The axial temperature gradient G at the vicinity of the solid-liquid interface24in an ingot is calculated in consideration of the heating value of a heater18, the dimensions and physical property values of furnace inside components and the convection of the melt12before pulling up the single crystal ingot15by a puller10by use of a numerical simulation of synthetic heater transfers and a numerical simulation of melt convection. Then, the pulling velocity V of the single crystal ingot is determined from an value experienced of the ratio C=V/G of the pulling velocity V and the axial temperature gradient G of the single crystal ingot at which the single crystal ingot becomes defect-free, obtained when the single crystal ingot was pulled up by a same type puller as the puller in the past, and the axial temperature gradient G calculated by use of the simulations. Then, the ingot is pulled up at the pulling velocity, and the change value of the temperature gradient G to the deterioration value of partial furnace inside components roughly measured while the ingot is pulled up is roughly forecasted by use of the simulations. And further, the pulling velocity V of the ingot is adjusted in such a way that the ratio C should become the value experienced according to the change value of the temperature gradient G roughly forecasted.

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