Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1992-09-30
1994-11-01
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117917, C30B 1522
Patent
active
053599594
ABSTRACT:
A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the speed of revolution of the quartz glass crucible and varying the intensity of the magnetic field applied to the melt according to the length of pull-up of the single crystal rod.
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Research: "Getting Holes Out of Silicon Chips"; Sony Corp.
Fusegawa Izumi
Yamagishi Hirotoshi
Breneman R. Bruce
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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