Method for providing mixed stacked structures, with various...

Details Method for providing mixed stacked structures, with various... Method for providing mixed stacked structures, with various...

2005-10-06

2009-06-02

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S406000, C438S761000, C257SE21240, C257SE21570

Reexamination Certificate

active

07541263

ABSTRACT:
The invention relates to a method for producing a semiconducting structure on a semiconducting substrate, one surface of which has a topology, this method including:a) a step for forming a first layer (24) in a first insulating material on said surface,b) a step for forming a second layer in a second insulating material (28), less dense than the first insulating material, with a thickness between 2.5 p and 3.5 p,c) a step for planarization of the assembly.

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