Method for providing increased dopant concentration in selected

Details Method for providing increased dopant concentration in selected Method for providing increased dopant concentration in selected

1987-10-30

1989-03-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 69, 437 75, 437160, 437164, 437239, 437956, 437948, H01L 21302

Patent

active

048142905

ABSTRACT:
A method for providing increased dopant concentration in selected regions of semiconductors by providing field implant dopant in the transition region located below the "bird's beak" region and between the field and active regions of a semiconductor. The method comprises the steps of: forming a thin insulating layer on the surface of a semiconductor substrate; depositing a thin anti-oxidant layer on the insulating layer; depositing a layer of photoresist on the anti-oxidant layer; selectively etching the anti-oxidant layer; ion-implanting the field region of the semiconductor substrate; providing spacers on the sides of the anti-oxidant layer; and oxidizing the semiconductor substrate.

REFERENCES:
patent: 3751722 (1973-08-01), Richman
patent: 4373965 (1983-02-01), Smigelski
patent: 4376336 (1983-03-01), Endo et al.
patent: 4404579 (1983-09-01), Leuschner
patent: 4521952 (1985-06-01), Riseman
patent: 4561172 (1985-12-01), Slawinski et al.
patent: 4569117 (1986-02-01), Baglee et al.
patent: 4577394 (1986-03-01), Peel
IBM Technical Disclosure Bulletin, vol. 27, No. 6, Nov. 1984, "Method For Forming Laterally Graded Fet Junctions".

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