Method for providing dielectric isolation in an epitaxial layer

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 90, 156 17, B05D 512

Patent

active

039353281

ABSTRACT:
Method for providing dielectric isolation of an epitaxial layer of a compound semiconductor or for providing separation and protection of pn-junction of a compound semiconductor by applying plasma oxidation.

REFERENCES:
patent: 3434868 (1969-03-01), Jorgensen
patent: 3442701 (1965-05-01), Lepselter
patent: 3649386 (1968-04-01), Murphy
H. Katto and Y. Koga; Journal of the Electrochemical Society, Oct. 1971; p. 1619.

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