Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-10-31
2009-06-23
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S618000, C257SE33011, C257SE33043, C438S479000, C438S751000
Reexamination Certificate
active
07550758
ABSTRACT:
A method and resulting high electron mobility transistor comprised of a substrate and a relaxed silicon-germanium layer formed over the substrate. A dopant layer is formed within the relaxed silicon-germanium layer. The dopant layer contains carbon and/or boron and has a full-width half-maximum (FWHM) thickness value of less than approximately 70 nanometers. A strained silicon layer is formed over the relaxed silicon-germanium layer and is configured to act as quantum well device.
REFERENCES:
patent: 5378901 (1995-01-01), Nii
patent: 5906708 (1999-05-01), Robinson et al.
patent: 5906951 (1999-05-01), Chu et al.
patent: 6064081 (2000-05-01), Robinson et al.
patent: 6323108 (2001-11-01), Kub et al.
patent: 6521041 (2003-02-01), Wu et al.
patent: 6586297 (2003-07-01), U'Ren et al.
patent: 6656809 (2003-12-01), Greenberg et al.
patent: 6667489 (2003-12-01), Suzumura et al.
patent: 6670654 (2003-12-01), Lanzerotti et al.
patent: 6750484 (2004-06-01), Lippert et al.
patent: 6781214 (2004-08-01), U'Ren et al.
patent: 6858541 (2005-02-01), Horning
patent: 6936910 (2005-08-01), Ellis-Monaghan et al.
patent: 6995430 (2006-02-01), Langdo et al.
patent: 7074623 (2006-07-01), Lochtefeld et al.
patent: 7227176 (2007-06-01), Wu et al.
patent: 2002/0081861 (2002-06-01), Robinson et al.
patent: 2003/0080394 (2003-05-01), Babcock et al.
patent: 2003/0082882 (2003-05-01), Babcock et al.
patent: 2003/0098465 (2003-05-01), Suzumura et al.
patent: 2003/0129802 (2003-07-01), Lanzerotti et al.
patent: 2003/0132453 (2003-07-01), Greenberg et al.
patent: 2003/0146448 (2003-08-01), U'Ren et al.
patent: 2004/0009649 (2004-01-01), Kub et al.
patent: 2004/0031979 (2004-02-01), Lochtefeld et al.
patent: 2004/0063293 (2004-04-01), Greenberg et al.
patent: 2004/0079989 (2004-04-01), Kaneko et al.
patent: 2004/0222486 (2004-11-01), Ellis-Monaghan et al.
patent: 2004/0251458 (2004-12-01), Mizushima et al.
patent: 2005/0051798 (2005-03-01), Lanzerotti et al.
patent: 2005/0233534 (2005-10-01), Lanzerotti et al.
patent: 2005/0280103 (2005-12-01), Langdo et al.
patent: 2006/0011906 (2006-01-01), Bedell et al.
patent: 2006/0030093 (2006-02-01), Zhang et al.
patent: 2006/0151787 (2006-07-01), Chen et al.
patent: 2006/0157733 (2006-07-01), Lucovsky et al.
patent: 2006/0292809 (2006-12-01), Enicks et al.
International Application No. PCT/US07/80994, Written Opinion mailed May 7, 2008, 6 pgs.
International Application No. PCT/US07/80994, International Search Report mailed May 7, 2008, 2 pgs.
G.S. Kar et al., “Effect of Carbon on Lattice Strain and Hole Mobility in Si1-xGex Alloys”, Journal of Materials Science: Materials in Electronics, 13, 2002, pp. 49-55.
D.C. Houghton, “Strain Relaxation Kinetics in Si-xGex/Si Heterostructures”, J. Appl. Physics, vol. 70, No. 4, Aug. 15, 1991, pp. 2136-2151.
Book: “Properties of Silicon Germanium and SiGe: Carbon”, INSPEC, 2000, 14 pages.
Prof. Ulrich Gösele et al., Science and Technology of Semiconductor Wafer Bonding, Duke Univ., Chap. 7, Wafer Bonding Laboratory, Thinning Procedures [online]. Undated [retrieved Aug. 24, 2006]. Retrieved from the Internet: < URL: www.duke.edu/web/wbl/ch7 >.
D. Enicks et al., “Thermal Redistribution of Oxygen and Carbon in Sub-50 NM Strained Layers of Boron Doped SiGeC”, ECS Transactions, 3 (7) , 2006, pp. 1087-1098.
Atmel Corporation
Pert Evan
Schwegman Lundberg & Woessner, P.A.
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