Method for providing a metal silicide layer on a substrate

Details Method for providing a metal silicide layer on a substrate Method for providing a metal silicide layer on a substrate

1977-06-30

1979-12-25

Esposito, Michael F.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 82, 427 93, 427 99, 427124, 427125, 427126, 427248A, 427248B, 427255, 427383A, C23C 1108, C23C 1100

Patent

active

041805968

ABSTRACT:
A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide.

REFERENCES:
patent: 2982619 (1961-05-01), Long
patent: 3000071 (1961-09-01), Wehrmann
patent: 3381182 (1968-04-01), Thornton
patent: 3540920 (1970-11-01), Wakefield
patent: 3549416 (1970-12-01), Rump
patent: 3576670 (1971-04-01), Hammond
patent: 3927225 (1975-12-01), Cordes
patent: 3968272 (1976-07-01), Anard
patent: 3979500 (1976-09-01), Sheppard
Aronsson, Prep. of Boride, Silicides & Phosphides, pp. 3-7 (1965).

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