Method for providing a metal-semiconductor contact

Fishing – trapping – and vermin destroying

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437200, 437190, 437192, 437944, 148DIG100, H01L 2144

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active

050949802

ABSTRACT:
By means of conventional deposition and lift-off processes, a metal contact plate is simultaneoulsy placed over transistor junction surfaces and over the surrounding field oxide boundary. After this process step, a dielectric layer, insulating the metal interconnect from the gate interconnect, is deposited and contact openings are plasma etched down to the metal contact plate, which acts to prevent erosion of the junction surface and the field oxide layer. When a diffusion barrier metal is used, the thermal stability of the contact resistance and the electromigration susceptibility are improved. While maintaining minimum transistor design dimensions and required alignment tolerances, the contacting metal plate allows for an increase in the contact opening area.

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