Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-08-28
2007-08-28
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S433000, C438S435000, C438S514000, C438S542000, C257SE21545, C257SE21546
Reexamination Certificate
active
10937154
ABSTRACT:
A system and method is disclosed for providing a deep connection to a substrate or buried layer of a semiconductor device. Three shallow trenches are etched halfway through a layer of epitaxial silicon that is located on a substrate. A second doped layer is created in the epitaxial silicon layer at the bottom of the central shallow trench. First and third doped layers are created in the epitaxial silicon layer adjacent to the central shallow trench. An oxide layer is then deposited to fill the three trenches. The second doped layer is diffused vertically down to the substrate. The first and third doped layers are diffused vertically down to the second doped layer. Lateral diffusion of the first and third doped layers is constrained by the oxide layer in the three trenches.
REFERENCES:
patent: 4140558 (1979-02-01), Murphy et al.
patent: 5780340 (1998-07-01), Gardner et al.
patent: 6958518 (2005-10-01), Wylie
Estrada Michelle
National Semiconductor Corporation
LandOfFree
Method for providing a deep connection to a substrate or... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for providing a deep connection to a substrate or..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for providing a deep connection to a substrate or... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3896122