Method for providing a coating layer of silicon carbide on the s

Details Method for providing a coating layer of silicon carbide on the s Method for providing a coating layer of silicon carbide on the s

1983-12-22

1985-07-30

Bueker, Richard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, C23C 1304

Patent

active

045321507

ABSTRACT:
The invention provides a novel method for providing the surface of various kinds of substrate articles, e.g. sapphire, quartz, alumina, metals, glass, plastics and the like with a coating layer of an amorphous silicon carbide of the formula Si.sub.x C.sub.1-x, in which x is a positive number of 0.2 to 0.9, by exposing the surface of the substrate article to an atmosphere of plasma generated in a gaseous atmosphere of an organosilicon compound having no halogen or oxygen atom directly bonded to the silicon atom, such as hexamethyl disilane, optionally admixed with a vapor or gas of a hydrocarbon compound, e.g. methane, benzene and the like.

REFERENCES:
Vossen et al, Thin Film Processes, Academic Press, New York, N.Y., 1978, pp. 353-354.

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