Method for protecting nonsilicided surfaces from silicide format

Details Method for protecting nonsilicided surfaces from silicide format Method for protecting nonsilicided surfaces from silicide format

1997-08-07

1999-03-16

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438655, 438630, H01L 2100

Patent

active

058830103

ABSTRACT:
Problems forming silicided and nonsilicided structures on the same silicon substrate are overcome utilizing a spacer oxide masking technique. A protective spacer oxide layer is deposited over the entire silicon substrate surface, and a silicide exclusion photoresist mask is selectively developed to permit etching of the spacer oxide layer in unmasked regions where silicides are expected to be formed. Areas of silicon substrate revealed by etching of the spacer oxide layer are exposed to silicide-forming metals, and these silicide-forming metals react with the silicon substrate to produce silicides. Spacer oxide remaining in masked regions prevents formation of silicides in those regions.

REFERENCES:
patent: 4742025 (1988-05-01), Ohyu et al.
patent: 5342798 (1994-08-01), Huang
patent: 5352631 (1994-10-01), Sitaram et al.
patent: 5413969 (1995-05-01), Huang
patent: 5750438 (1998-05-01), Hsue et al.

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