Method for protecting a magnetoresistive head from damage due to

Details Method for protecting a magnetoresistive head from damage due to Method for protecting a magnetoresistive head from damage due to

1998-01-15

2000-04-04

Miller, Brian E.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

060468904

ABSTRACT:
A magnetoresistive head of the present invention is not easily damaged by electrostatic discharge, and is easy to manufacture. A magnetoresistance effect element is interposed between upper and lower shields composed of soft magnetic material through first and second gaps composed of an insulating material. The lower shield is connected to a slider via a slider protective film, which is an insulating substance. The magnetoresistive head is constructed so that a capacity Cg between the magnetoresistance effect element and the lower shield is 6.3 or more times a capacity between the lower shield and the slider by using a material (e.g., silicon carbide) exhibiting a large relative dielectric constant as, e.g., a second gap material.

REFERENCES:
patent: 5557492 (1996-09-01), Gill et al.
patent: 5760584 (1998-06-01), Frederick
patent: 5761009 (1998-06-01), Hughbanks et al.
patent: 5822153 (1998-10-01), Lairson et al.
L.H. Germer; "Electrical Breakdown between Close Electrodes in Air"; Journal of Applied Physics, vol. 30, No. 1; Jan. 1959; pp. 46-51.

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