Method for programming single-bit storage SONOS type memory

Details Method for programming single-bit storage SONOS type memory Method for programming single-bit storage SONOS type memory

2006-07-11

2006-07-11

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185010

Reexamination Certificate

active

07075830

ABSTRACT:
A method for programming a single-bit storage nonvolatile memory cell includes the steps of: providing a single-bit storage nonvolatile memory cell having a channel region between a left bit line and a right bit line, a composite dielectric layer for storing digital data, and a word line overlying the composite dielectric layer, performing a left side electron injection on the single-bit storage nonvolatile memory cell by applying a relatively high word line voltage to the word line, applying a relatively high left bit line voltage to the left bit line, and applying a relatively low right bit line voltage to the right bit line; and performing a right side electron injection by applying the relatively high word line voltage to the word line, applying a relatively low left bit line voltage to the left bit line, and applying a relatively high right bit line voltage to the right bit line.

REFERENCES:
patent: 6754109 (2004-06-01), Fastow et al.

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