Method for programming semiconductor junctions and for using the

Details Method for programming semiconductor junctions and for using the Method for programming semiconductor junctions and for using the

1998-12-07

1999-11-23

Nelms, David

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365174, 365208, G11C 1700

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active

059911875

ABSTRACT:
An integrated semiconductor junction antifuse is formed from either adjacent regions of opposite doping types or spaced apart regions of similar doping type within a substrate. In its unblown state, the junction antifuse forms an open circuit that blocks current from flowing while in the blown state, the junction antifuse conducts current. The junction antifuse is blown by applying a breakdown voltage sufficient to overcome a semiconductor junction so that current flows across the reverse-biased semiconductor junction. As current flows across the reverse-biased junction, dopant migration forms a conductive path so that the junction antifuse no longer forms an open circuit.

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patent: 4783763 (1988-11-01), Bergman
patent: 4961102 (1990-10-01), Shideler et al.
patent: 5272370 (1993-12-01), French
patent: 5851882 (1998-12-01), Harshfield
patent: 5852323 (1998-12-01), Conn

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