Method for programming, reading and erasing a flash memory

Details Method for programming, reading and erasing a flash memory Method for programming, reading and erasing a flash memory

1998-12-23

2000-07-18

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518533, G11C 1134

Patent

active

060916389

ABSTRACT:
A method for programming, reading and erasing data stored in a non-volatile memory, a flashing memory in particular, includes applying different voltages on individual components of a flash memory. The flash memory physically consists of a substrate, and a tunneling oxide layer, a floating gate, a dielectric layer and a control gate formed on the substrate in sequence, wherein the substrate also contains a source region and a drain region. A conformed dielectric layer and a selective gate further cover the forgoing structure. By applying properly selected voltages on the substrate, the source region, the drain region, the control gate and the selective gate, the method is capable of preventing the drawbacks of a conventional method on programming, reading and erasing data stored in a flash memory, and improving the process efficiency.

REFERENCES:
patent: 5856943 (1999-01-01), Jeng
patent: 5923589 (1999-07-01), Kaida et al.

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