Method for programming P-channel EEPROM

Details Method for programming P-channel EEPROM Method for programming P-channel EEPROM

2006-05-30

2006-05-30

Elms, Richard (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185010, C365S185260, C365S226000

Reexamination Certificate

active

07054196

ABSTRACT:
A method for programming a P-channel EEPROM having an N-well, a floating gate, a control gate, a P-type source region and a P-type drain region is provided. In the method, the N-well is grounded, a first positive voltage is applied to the control gate, a second positive voltage or a programming current is applied to the P-type source region, and a negative voltage is applied to the P-type drain region.

REFERENCES:
patent: 5491657 (1996-02-01), Haddad et al.

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