Method for programming of memory cells, in particular of the...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185180

Reexamination Certificate

active

07606078

ABSTRACT:
A method is described for programming memory cells, in particular of the Flash type. In accordance with the method, a verification is performed with a first parallelism (M) in which a reading is carried out for determining the state of a group of memory cells, a determination is performed of a programming parallelism (np), based on the results of the verification, and a real programming of the memory cells carried out with the programming parallelism (np). An architecture is also described for programming memory cells in particular of the Flash type.

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patent: 7366022 (2008-04-01), Li et al.
patent: 2002/0041516 (2002-04-01), Tran et al.
patent: 2004/0145947 (2004-07-01), Micheloni et al.
patent: 2005/0157555 (2005-07-01), Ono et al.

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