Method for programming of memory cells, in particular of the...

Details Method for programming of memory cells, in particular of the... Method for programming of memory cells, in particular of the...

2006-12-08

2009-10-20

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180

Reexamination Certificate

active

07606078

ABSTRACT:
A method is described for programming memory cells, in particular of the Flash type. In accordance with the method, a verification is performed with a first parallelism (M) in which a reading is carried out for determining the state of a group of memory cells, a determination is performed of a programming parallelism (np), based on the results of the verification, and a real programming of the memory cells carried out with the programming parallelism (np). An architecture is also described for programming memory cells in particular of the Flash type.

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patent: 2002/0041516 (2002-04-01), Tran et al.
patent: 2004/0145947 (2004-07-01), Micheloni et al.
patent: 2005/0157555 (2005-07-01), Ono et al.

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