Method for programming of memory cells, in particular of the...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185190

Reexamination Certificate

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07944751

ABSTRACT:
A method is described for programming memory cells, in particular of the Flash type. In accordance with the method, a verification is performed with a first parallelism (M) in which a reading is carried out for determining the state of a group of memory cells, a determination is performed of a programming parallelism (np), based on the results of the verification, and a real programming of the memory cells carried out with the programming parallelism (np). An architecture is also described for programming memory cells in particular of the Flash type.

REFERENCES:
patent: 6292398 (2001-09-01), Pasotti et al.
patent: 2004/0130946 (2004-07-01), Uribe et al.
patent: 2006/0044919 (2006-03-01), Taoka et al.

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