Method for programming nand type flash memory

Details Method for programming nand type flash memory Method for programming nand type flash memory

2011-08-16

2011-08-16

Le, Vu A (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185230, C365S185010

Reexamination Certificate

active

08000145

ABSTRACT:
Disclosed is a method for programming a flash memory device capable of preventing a threshold voltage distribution of a memory cell from being moved due to a pass disturbance of the memory cell programmed initially at a program operation performed on a page-unit basis. The method for programming a NAND flash memory device including a plurality of cell strings having N memory cells connected, in which gates of the memory cells are connected to a word line, the method is performed by applying a program voltage to at least two word lines simultaneously including a selected word line.

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patent: 2007-087526 (2007-04-01), None
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