Method for programming multi-level cell memory array

Details Method for programming multi-level cell memory array Method for programming multi-level cell memory array

2007-02-01

2008-07-08

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185240

Reexamination Certificate

active

07397705

ABSTRACT:
A method for operating a charge-trapping multi-level cell (“MLC”) memory array comprises programming a first plurality of charge-trapping sites to a preliminary first-level value, programming a second plurality of charge-trapping sites to a preliminary second-level value, and programming a third plurality of charge-trapping sites to a final third-level value using a first programming scheme. Then, the first plurality of charge-trapping sites is programmed to a final first-level value and the second plurality of charge-trapping sites is programmed to a final second-level value using a second programming scheme.

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