Method for programming and erasing a triple-poly split-gate flas

Details Method for programming and erasing a triple-poly split-gate flas Method for programming and erasing a triple-poly split-gate flas

1999-08-24

2000-08-29

Phan, Trong

Static information storage and retrieval

Floating gate

Particular biasing

36518529, G11C 1604

Patent

active

061117889

ABSTRACT:
A method of programming and erasing a triple-poly split-gate flash memory. The memory cell is programmed by substrate hot-electron injection and erased by the tunneling effect and an inversion layer near the drain region. Such programming/erasing procedures can achieve uniform injection with low programming current and high injection efficiency.

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patent: 5691939 (1997-11-01), Chang et al.
patent: 5706227 (1998-01-01), Chang et al.
patent: 5856943 (1999-01-01), Jeng

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