Method for programming an analog/multi-level flash EEPROM

Details Method for programming an analog/multi-level flash EEPROM Method for programming an analog/multi-level flash EEPROM

1998-02-23

2000-03-21

Le, Vu A.

Static information storage and retrieval

Floating gate

Multiple values

36518519, 36518522, G11C 700

Patent

active

060409932

ABSTRACT:
A method for programming an analog/multi-level flash memory array, which insures fast programming to substantially all of the cells in the array, without over-programming, is based on providing a pattern of program retry pulses which have respective pulse widths and pulse heights which vary according to a pattern. The pattern includes three stages which program and verify cell threshold voltages with different program verification margins so that an accurate cell threshold voltage can be achieved for each cell.

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