Static information storage and retrieval – Floating gate – Multiple values
Patent
1995-02-22
1996-04-23
Nelms, David C.
Static information storage and retrieval
Floating gate
Multiple values
365168, 36518527, 36518518, G11C 1140
Patent
active
055110215
ABSTRACT:
Multiple logic levels can be programmed into a single EPROM or FLASH memory cell by applying one of a corresponding number of programming voltages to the control gate of a memory cell that has a forward-biased source-to-substrate junction and a reverse-biased drain-to-substrate junction. During programming, the bias conditions form substrate hot electrons which, in addition to the channel hot electrons, accumulate on the floating gate. By utilizing the substrate hot electrons, a much lower control gate voltage can be utilized during programming. More importantly, however, once the channel hot electrons cease to exist, the substrate hot electrons and holes converge to a stable charge that is related to the control gate voltage used during programming and the programmed threshold voltage of the cell.
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Bergemont Albert
Chi Min-hwa
Hoang Huan
National Semiconductor Corporation
Nelms David C.
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