Method for programming a nonvolatile memory

Details Method for programming a nonvolatile memory Method for programming a nonvolatile memory

2008-12-04

2010-11-16

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185260

Reexamination Certificate

active

07835192

ABSTRACT:
A method for programming a nonvolatile memory includes applying at least a voltage to a source or a drain, so as to inject carriers of the source or drain into a substrate; applying a third voltage to a gate or the substrate, so that the carriers which are in the substrate having enough energy can surmount an oxide layer to reach a charge storage device.

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European Search Report for Application No. 08170425.6-1233/2144250 mailed Jul. 5, 2010.

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