Method for programming a multilevel memory

Details Method for programming a multilevel memory Method for programming a multilevel memory

2007-06-14

2009-08-25

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185280

Reexamination Certificate

active

07580292

ABSTRACT:
A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method includes (a) programming the bits of the memory having a Vt level lower than the PV level of a targeted programmed state into programmed bits by using a Vd bias BL; (b) ending this method if each bit of the memory has a Vt level not lower than the PV level of the targeted programmed state, otherwise, continuing the step (c); and (c) setting BL=BL+K1and repeating the step (a) if each of the programmed bits has a Vt level lower than the PV level, while setting BL=BL−K2, and repeating the step (a) if at least one of the programmed bits has a Vt level not lower than the PV level.

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