Method for programming a multilevel memory

Details Method for programming a multilevel memory Method for programming a multilevel memory

2007-03-19

2008-11-04

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185220, C365S185240

Reexamination Certificate

active

07447068

ABSTRACT:
A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises programming the bits of the memory having a Vt level lower than the first PV level of the targeted programmed state such that at least one bit of them has a Vt level larger than a second PV level corresponding to a targeted programmed state, wherein the second PV level of the targeted programmed state is larger than the corresponding first PV level; and programming only the bits of the memory with a Vt level lower than the first PV level of the targeted programmed state such that each of them has a Vt level larger than the first PV level of the targeted programmed state.

REFERENCES:
patent: 7042766 (2006-05-01), Wang et al.
patent: 7130210 (2006-10-01), Bathul et al.
patent: 7136304 (2006-11-01), Cohen et al.

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