Method for programming a multilevel memory

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S185240, C365S185280

Reexamination Certificate

active

07961513

ABSTRACT:
A method for programming a MLC memory includes (a) programming the bits of the memory having a Vt level lower than the PV level of a targeted programmed state into programmed bits by using a Vd bias BL; (b) ending this method if each bit of the memory has a Vt level not lower than the PV level of the targeted programmed state, otherwise, continuing the step (c); and (c) setting BL=BL+K1and repeating the step (a) if each of the programmed bits has a Vt level lower than the PV level, while setting BL=BL−K2, and repeating the step (a) if at least one of the programmed bits has a Vt level not lower than the PV level.

REFERENCES:
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patent: 7397705 (2008-07-01), Huang et al.
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patent: 7447068 (2008-11-01), Tsai et al.
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patent: 7471568 (2008-12-01), Wu
patent: 7489549 (2009-02-01), Mokhlesi
patent: 7580292 (2009-08-01), Ho et al.

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