Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-05-17
2011-05-17
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185020, C365S185170, C365S185190, C365S185280
Reexamination Certificate
active
07944752
ABSTRACT:
A method for programming a flash memory device includes applying a program bias to a memory cell of a plurality of memory cells within a memory cell string. Each memory cell string comprises a source select line, a plurality of memory cells and a drain select line. A first pass bias is applied to at least one of the memory cells in a source select line direction relative to the memory cell to which the program bias has been applied. A second pass bias is applied to the memory cells in a drain select line direction relative the memory cell(s) to which the first pass bias has been applied.
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Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Pham Ly D
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