Method for programming a flash memory

Details Method for programming a flash memory Method for programming a flash memory

1998-08-07

1999-08-24

Nelms, David

Static information storage and retrieval

Floating gate

Particular connection

36518528, 36518533, G11C 1604

Patent

active

059432616

ABSTRACT:
A method of programming a flash memory device. The method includes a step of applying a voltage that is less than a threshold voltage to a select gate of a flash memory device. Electrons are transferred from a source/drain region or preferably the source region through a region underlying the select gate to a channel region underlying a floating gate. The transferring step occurs using an electron gradient from a higher concentration region in the source region to a lower concentration region in the channel region. By way of a selected voltage applied to a control gate, one of a plurality of selected voltage levels are applied to the floating gate.

REFERENCES:
patent: 5488586 (1996-01-01), Madurawe et al.
patent: 5715194 (1998-02-01), Hu

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