Method for programming a charge-trapping nonvolatile memory...

Details Method for programming a charge-trapping nonvolatile memory... Method for programming a charge-trapping nonvolatile memory...

2007-04-03

2007-04-03

Tran, Michael (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180

Reexamination Certificate

active

11026708

ABSTRACT:
A raised-Vs Channel Initialed Secondary Electron Injection is disclosed to program a charge-trapping nonvolatile memory cell. The source of the charge-trapping nonvolatile memory cell is applied with a positive source voltage, and the drain of the charge-trapping nonvolatile memory cell is applied with a positive drain voltage, wherein the positive drain voltage is greater than the positive source voltage. The substrate of the charge-trapping nonvolatile memory cell is grounded. A positive gate voltage is applied to the polysilicon gate of the charge-trapping nonvolatile memory cell.

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