Static information storage and retrieval – Floating gate – Particular connection
Patent
1995-05-02
1997-07-01
Nguyen, Viet Q.
Static information storage and retrieval
Floating gate
Particular connection
36518533, 36518508, 36518505, 3651851, 365182, H01L 2968
Patent
active
056445326
ABSTRACT:
A selected cell in a virtual-ground flash EEPROM array, which is based on a source-coupled, split-gate storage cell, is programmed by grounding the source bit line of the selected cell, grounding the drain bit line of the immediately adjacent cell which shares the same source bit line, applying a write bias voltage to the remaining bit lines, applying a programming voltage to the word line associated with the selected cell, and applying ground to the remaining word lines.
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National Semiconductor Corporation
Nguyen Viet Q.
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