Method for production of SOI substrate by pasting and SOI substr

Details Method for production of SOI substrate by pasting and SOI substr Method for production of SOI substrate by pasting and SOI substr

1997-04-04

2000-12-05

Speer, Timothy

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438406, 438753, 438977, 428446, 428450, 428702, H01L 21306

Patent

active

061566241

ABSTRACT:
This invention solves the problem of a pasted SOI substrate generating voids in the peripheral part thereof and consequently decreasing the number of devices to be derived therefrom. It concerns a method for the production of a SOI substrate obtained by pasting a first Si substrate possessing a SiO.sub.2 surface and a second substrate possessing a Si surface on the SiO.sub.2 surface and the Si surface, which method comprises washing the Si surface of the second Si substrate, thereby imparting hydrophobicity to the Si surface before the first Si substrate and the second Si substrate are pasted together.

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