Method for production of silicon thin film piezoresistive device

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427100, B05D 306

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046577750

ABSTRACT:
Semiconductor piezoresistive devices can be obtained by the plasma CVD method, i.e., exposing a substrate to a plasma atmosphere produced from silicon hydride gas containing boron hydride to deposit on the substrate a thin film of crystalline silicon as a piezoresistive material. In accordance with this method, it is possible to form piezoresistive devices into IC's and also to impart excellent properties thereto.

REFERENCES:
patent: 4504518 (1985-03-01), Ovsitinsky et al.
Matsumura et al., Appl. Phys. Lett., vol. 36, No. 6, Mar. 15, 1980, "A Heat-Resisting New Amorphous Silicon", pp. 439-440.
Tong et al., Appl. Phys. Lett., vol. 38, No. 10, May 15, 1981, "Highly Stable, Photosensitive Evaporated Amorphous Silicon Films", pp. 789-790.

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