Method for production of silicon

Details Method for production of silicon Method for production of silicon

2003-07-22

2008-11-25

Bos, Steven (Department: 1793)

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

C423S348000, C423S349000

Reexamination Certificate

active

07455822

ABSTRACT:
A process for production of Si, characterized by adding an oxide, hydroxide, carbonate or fluoride of an alkali metal element, or an oxide, hydroxide, carbonate or fluoride of an alkaline earth metal element, or two or more of such compounds, to solid SiO in a total molar amount of from 1/20 to 1000 times with respect to the moles of solid SiO, heating the mixture at between the melting point of Si and 2000° C. to induce a chemical reaction which produces Si and separating and recovering the Si from the reaction by-product, for the purpose of inexpensively and efficiently producing Si from various forms of solid SiO with no industrial value produced from Si production steps and the like.

REFERENCES:
patent: 875285 (1907-12-01), Potter
patent: 2402839 (1946-06-01), Ohl
patent: 3010797 (1961-11-01), Aries
patent: 3660298 (1972-05-01), McClincy et al.
patent: 4193975 (1980-03-01), Kotval et al.
patent: 5601656 (1997-02-01), Li
patent: 6395249 (2002-05-01), Kondo et al.
patent: 1191520 (1998-08-01), None
patent: 1057782 (2000-12-01), None
patent: 2116956 (1983-10-01), None
patent: 62123009 (1987-06-01), None
patent: 6379717 (1988-04-01), None
patent: 2001097708 (2001-04-01), None
patent: 8907578 (1989-08-01), None
patent: 9703922 (1997-02-01), None
patent: 9933749 (1999-07-01), None
Translation of First Office Action re 03801130.1.

Affiliated with

Also associated with

Rating

Method for production of silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for production of silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for production of silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4022640