Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1986-07-15
1988-12-20
Page, Thurman K.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
417 37, 417 39, B05D 306
Patent
active
047924608
ABSTRACT:
A process is provided for forming high purity polysilanes or polygermanes by electric discharge wherein the monosilane or monogermane is provided in a gaseous mixture with a carrier gas at atmospheric pressure. The polysilanes or polygermanes produced at atmospheric pressure are further deposited by various means onto a substrate as hydrogenated amorphous silicon or germanium. The polysilane may also be used for the deposition of hydrogenated amorphous silicon alloys.
REFERENCES:
patent: 3824121 (1974-07-01), Bradley et al.
patent: 4033286 (1977-07-01), Chern et al.
patent: 4100330 (1978-07-01), Donley
patent: 4353788 (1982-10-01), Jeffrey et al.
patent: 4386117 (1983-05-01), Gordon
patent: 4388344 (1983-06-01), Shuskus et al.
patent: 4430149 (1984-02-01), Berkman
patent: 4439463 (1984-03-01), Miller
patent: 4491604 (1985-01-01), Lesk et al.
patent: 4505947 (1985-03-01), Vukanovic et al.
patent: 4509451 (1985-04-01), Collins et al.
patent: 4525382 (1985-06-01), Sugioka
patent: 4526805 (1985-07-01), Yoshizawa
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4634601 (1987-01-01), Hamawana et al.
Spanier, et al., Inorganic Chem. 1, 432-433 (1962), "Conversion of Silane to Hefer Silanes in Silent Elect. ".
Gau et al; appl., Phys. Ltr. 39, 436-438 (1981), "Prep. of Amorphous Silicon Filons by Chemical Vaper Deposition from Higher Silanes".
Delahoy et al., Proc. Soc. Photo-Optical Inst. Eng. vol. 47-54 (1983), "Prop of Hydrog. Amorphous Silicon Prep. by Chem. Vapor Depo. from Higher Silanes".
Ellis et al., J. Appl. Phys. 54, 5381-5384 (1983), "Simple Method of Prop. Hydrog. Amorphous Silicon Films by Chem. Vapor Depo at atmos. Pressure".
Ashida et al., Japan J. Appl. Phys., 23, <129-131 (1984), "Hydros. Amor. Silicon Prod. by Pyrolysis of Disilane in a Hot Wall Reactor".
Hegedus et al., Proc XVTI IEEE photor. Spec. Conf., 239-244 (1984), "CVD Amorphous Silicon Solar Cells".
Chu Shirley S.
Chu Ting L.
Electric Power Research Institute Inc.
Horne L. R.
Page Thurman K.
LandOfFree
Method for production of polysilanes and polygermanes, and depos does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for production of polysilanes and polygermanes, and depos, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for production of polysilanes and polygermanes, and depos will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1908916